do-4 1 plastic-encapsulate diodes hd zc 32 1 h igh diode semiconductor do-4 1 features i o 1a vrrm 150v-200v high surge current capability applications rectifier marking polarity: color band denotes cathode SR1150/sr1200 schottky rectifier SR1150 thru sr1200 item symbol unit conditions repetitive peak reverse voltage v rrm v average forward current i f(av) a 60hz half-sine wave, resistance 1.0 surge(non-repetitive)forward current i fsm a 60hz half-sine wave,1 cycle, ta=25 30 junction temperature t j storage temperature t stg -55 ~ +150 electrical characteristics (t a =25 unless otherwise specified item symbol unit test condition peak forward voltage v fm v i fm =1.0a i rrm1 t a =25 0.1 peak reverse current i rrm2 ma v rm =v rrm t a =100 10 r j-a between junction and ambient 50 thermal resistance(typical) r j-l /w between junction and lead 15 150 200 sr1 sr1 00 1 50 2 150 200 0.95 load, ta= 100 105 140 max i mum r m s v rms vo ltage v -55 ~ +150
typical characteristics 2 h igh diode semiconductor !"#$%& *+,-./01203456.7 ! fg9:0#%h #i#0*j*klmnmo o pm0!jlq%lr0"ilfm03illm*o sgt,70"yz[6.0\]620"yz.0q]^. _mrm30#.`a1b cgd 9gd cd 9d cdd d d fd cfd ! fgc:0!jlq%lr03illm*o00rml%o *f03ilpm j$%& "yz[6.0na]7.0\]620q]^.0|d\}0l.7y7`y^.01/ zb+5`y^.0~1]b0dgtuf$wgf,,&0~.]b0~.z[`a o] ??? cdd d 9f ????? ???????????????????????????????????? ?| ??a???-??a 23?????? ?2 ? ?2 ????? ?? ?| ? ?? 2?2 2?? 2?| ?| ????1? ? ???????????????????????????? ???????3? ? ?? ? ? a???a????????aa???e?? ??????????? ??? ?? SR1150-sr1200 SR1150 sr1200 1.0 0.2 0.4 0.6 0.8 30 24 18 12 6
3 h igh diode semiconductor do-4 1 1.0(25.4) min .205(5.21) .166(4.22) .034(0.86) .028(0.71) dia .107(2.72) .080(2.03) 1.0(25.4) min unit: in inches (millimeters) dia
h igh diode semiconductor ammo box packaging specifications for axial lead rectifiers
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